Speakers Bureau

TCC-5

Linearization: An Enabling Technology for 3G+ Systems

Dr. F. M. Ghannouchi

Tel: 403-220-5807

This talk briefly presents the basic concepts of linearization technology as well as the reason why linearization is being considered as an enabling technology for 3G and beyond wireless communication systems, Included will be the description and explanation and how linearization favorably...

More

RF/DSP Co-Designed Power Amplifiers/Transmitters for Advanced Wireless and Satellite Applications

Dr. F. M. Ghannouchi

Tel: 403-220-5807

The wireless and satellite communications communities have always been looking for power- and spectrum-efficient amplification systems. The design of such power amplifiers has to be considered closely together with the system architecture in order to ensure optimal system level performances in...

More

Minimizing Power Amplifier Memory Effects

Dr. Allen Katz

The College of New Jersey, ECE Dept. PO BOX 7718, Ewing, NJ 08628-0718, USA Linearizer Technology, Inc., 3 Nami Lane, Unit C-9 Hamilton, NJ , 08619,

Tel: +1-609-584-8424

Fax: +1-609-631-0177

Memory effects are changes in an amplifiers non-linear characteristics resulting from the past history of the input signal. Predistortion linearization depends on a stable non-linear response, and can be significantly degraded by memory effects. This presentation will begin with an overview of...

More

Linearization: Reducing Distortion in Power Amplifiers

Dr. Allen Katz

The College of New Jersey, ECE Dept. PO BOX 7718, Ewing, NJ 08628-0718, USA Linearizer Technology, Inc., 3 Nami Lane, Unit C-9 Hamilton, NJ , 08619,

Tel: +1-609-584-8424

Fax: +1-609-631-0177

Our Society's need to exchange greater and greater amounts of information has created an unprecedented demand for highly linear power amplifiers. High linearity is required for the spectrally efficient transmission of information. This presentation will discuss techniques for the...

More

Design of GaN Power Amplifiers

Edward C. Niehenke

Niehenke Consulting, 5829 Bellanca Drive, Elkridge, MD 21075, USA

Tel: 1-410-796-5866

Fax: 1-410-796-5829

This lecture introduces attendees to the GaN-transistor, its properties, various structures, including the latest GaN power amplifier (PA) design techniques. The properties of GaN will be presented showing the advantage of these devices over GaAs and Si. GaN HEMT transistors will be shown...

More